low implantation

基本解释

Comparing with high-energy ion implantation, low energy ion implantation brings more problems.
低能離子注入與高能離子注入相比麪臨著更多的問題。
Densities of threading dislocation in the layer of top silicon of SIMOX wafer can be reduced by using oxygen ion implantation of low dose.
低劑量氧離子注入能降低SIMOX矽片頂層矽中的間隙原子濃度，從而降低穿透位錯的密度。
However, the effect of low energy ion implantation on the length of bough, the side-bough, the divarication and the size of peanut were very weak.
而花生主枝長，側枝長，分枝數和莢果大小等性狀除個別劑量外影響較小，變化槼律性較弱。